SKM145GB124D Semikron International, SKM145GB124D Datasheet
SKM145GB124D
Manufacturer Part Number
SKM145GB124D
Description
Manufacturer
Semikron International
Datasheet
1.SKM145GB124D.pdf
(6 pages)
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© by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
V
V
I
I
V
P
T
V
humidity
climate
Inverse Diode
I
I
I
I
Characteristics
Symbol Conditions
V
V
I
I
V
V
g
C
C
C
C
L
t
t
t
t
E
E
Inverse Diode
V
V
V
r
I
Q
Thermal characteristics
R
R
R
C
CM
F
FM
FSM
2
CES
GES
d(on)
r
d(off)
f
RRM
t
fs
CE
j
CES
CGR
GES
tot
isol
t
(BR)CES
GE(th)
CEsat
CEsat
on
off
F
F
TO
, (T
CHC
ies
oes
res
thjc
thjc
thch
rr
= –I
= V
= V
= –I
5)
5)
stg
C
EC
EC
)
CM
V
V
V
V
V
I
I
V
per IGBT
I
I
T
T
I
I
per IGBT
per diode
per module
R
T
T
per IGBT, T
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
T
T
t
t
C
C
F
F
F
F
p
p
j
j
GE
GE
GE
CE
GE
CE
case
case
case
case
GE
= 100 A
= 150 A
= 100 A; T
= 100 A; T
= 100 A
= 150 A
V
V
f = 1 MHz
V
V
I
R
T
= 125 °C
= 125 °C
= 10 ms; sin.; T
= 10 ms; T
C
j
GE
CE
CC
GE
Gon
= V
= 20 V, I
8)
= 0, I
= V
= 0
= 20 V, V
= 125 °C
= 100 A, ind. load
= 20 k
= 25/70 °C
= 25/70 °C; t
= 25/80 °C
= 25/80 °C; t
= 600 V
= 25 V
= 0
= –15 V / +15 V
= R
CES
CE
C
, I
= 4 mA
Goff
C
case
C
j
j
T
T
V
T
V
T
j
= 4 mA
= 125 °C
= 125 °C
1)
CE
1)
= 150 °C
j
j
j
j
GE
= 100 A
GE
= 8
= 25 °C
= 125 °C
= 25 (125) °C
= 25 (125) °C
= 25 °C
= 0
= 15 V;
= 0 V;
j
p
p
= 150 °C
= 1 ms
= 1 ms
3)
2)
2)
min.
4,5
V
54
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
CES
–40 ... + 150 (125)
2,25(2,1)
2,1(2,4)
2,6(3,1)
2,0(1,8)
40/125/56
190 / 145
380 / 290
380 / 290
130 / 90
Values
1000
Class F
typ.
500
110
470
5,5
0,2
6,5
1,1
2 500
50
60
14
13
52
12
1200
1200
1100
6000
± 20
–
9
–
–
–
–
–
–
–
–
800
0898
2,45(2,85)
max.
1500
0,15
0,30
0,05
350
600
6,5
8,5
2,5
1,2
30
11
–
2
–
1
–
–
–
–
–
–
–
–
–
–
–
Units
Units
°C/W
°C/W
°C/W
mWs
mWs
m
A
mA
mA
nH
°C
pF
nF
pF
pF
ns
ns
ns
ns
W
V
V
A
A
V
V
A
A
A
V
V
V
V
S
V
V
V
A
2
A
C
s
SEMITRANS
Low Loss IGBT Modules
SKM 145 GB 124 D
Features
•
•
•
•
•
•
•
•
•
Typical Applications:
•
1)
2)
3)
5)
8)
Cases and mech. data
SEMITRANS 2
MOS input (voltage controlled)
N channel, homogeneous Silicon
structure (NPT- Non punch-
through IGBT)
Low loss high density chip
Low tail current
High short circuit capability,
self limiting to 6 * I
Latch-up free
Fast & soft inverse CAL diodes
Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
Large clearance (10 mm) and
creepage distances (20 mm)
Switching (not for linear use)
T
specified
I
–di
Use V
See fig. 2 + 3; R
CAL = Controlled Axial Lifetime
Technology
F
GB
case
= – I
F
/dt = 1000 A/ s, V
= 25 °C, unless otherwise
GEoff
C
, V
R
= –5... –15 V
= 600 V,
®
Goff
M
= 6,8
cnom
GE
= 0 V
page 5
page 6
8)
1
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SKM145GB124D Summary of contents
Page 1
Absolute Maximum Ratings 1) Symbol Conditions V CES CGR 25/70 °C C case 25/70 ° case p V GES P per IGBT, T ...
Page 2
SKM 145 GB 124 D 900 W 800 700 600 500 400 300 200 100 P tot 100 T C Fig. 1 Rated power dissipation P 40 mWs ...
Page 3
A 17V 15V 13V 150 11V 9V 7V 100 Fig. 9 Typ. output characteristic · I cond(t) CEsat(t) C( · ...
Page 4
SKM 145 GB 124 600V 100 200 300 Q Gate Fig. 13 Typ. gate charge characteristic 1000 ns 100 100 ...
Page 5
K/W 0,1 0,01 0,001 single pulse Z thJC 0,0001 0,00001 0,0001 0,001 0, Fig. 19 Transient thermal impedance of IGBT thJC ...
Page 6
SKM 145 GB 124 D SEMITRANS 2 Case Recognized File no 532 SKM 145 GB 124 D Dimensions in mm Case outline and circuit diagram Mechanical Data Symbol Conditions M to heatsink, SI Units 1 ...