SKM145GB128DN_06 Semikron International, SKM145GB128DN_06 Datasheet
SKM145GB128DN_06
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SKM145GB128DN_06 Summary of contents
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SKM 145GB176D ... ® SEMITRANS 2 Trench IGBT Modules SKM 145GB176D SKM 145GAL176D Preliminary Data Features Typical Applications Remarks GB GAL 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Freewheeling Diode Module Characteristics Symbol Conditions IGBT 14-09-2006 RAA Values ...
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SKM 145GB176D ... ® SEMITRANS 2 Trench IGBT Modules SKM 145GB176D SKM 145GAL176D Preliminary Data Features Typical Applications Remarks GB GAL 2 Characteristics Symbol Conditions Inverse Diode Freewheeling Diode Module This is an electrostatic discharge sensitive device (ESDS), international standard ...
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SKM 145GB176D ... ® SEMITRANS 2 Trench IGBT Modules SKM 145GB176D SKM 145GAL176D Preliminary Data Features Typical Applications Remarks GB GAL Symbol Conditions Z th(j-c)l Z th(j-c)D 14-09-2006 RAA Values Units © by SEMIKRON ...
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SKM 145GB176D ... Fig. 1 Typ. output characteristic, inclusive R Fig. 3 Typ. turn-on /-off energy = Fig. 5 Typ. transfer characteristic 4 Fig. 2 Rated current vs. temperature I CC'+ EE' Fig. 4 Typ. turn-on ...
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SKM 145GB176D ... Fig. 7 Typ. switching times vs Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 11 Typ. CAL diode peak reverse recovery current 5 Fig. 8 Typ. switching times vs. gate resistor R Fig. ...
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SKM 145GB176D ... UL Recognized 6 14-09-2006 RAA File no 532 © by SEMIKRON ...