STTA206S SGS-Thomson-Microelectronics, STTA206S Datasheet

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STTA206S

Manufacturer Part Number
STTA206S
Description
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
Manufacturer
SGS-Thomson-Microelectronics
Datasheet

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Part Number:
STTA206S
Manufacturer:
ST
Quantity:
54 000
November 1999 - Ed: 2D
MAIN PRODUCTS CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH "A" family drastically cuts losses
in both the diode and the associated switching
IGBT or MOSFET in all "Freewheel Mode"
operations and is particulary suitable and efficient
ABSOLUTE MAXIMUM RATINGS
TM : TURBOSWITCH is a trademark of STMicroelectronics
TURBOSWITCH
TIONS : FREEWHEEL OR BOOSTER DIODE
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
SPECIFIC TO "FREEWHEEL MODE" OPERA-
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
HIGH FREQUENCY OPERATIONS
SURFACE MOUNT DEVICE
Symbol
I
V
V
F(RMS)
I
T
FRM
RRM
RSM
T
V
stg
t
j
F
rr
V
I
F(AV)
®
RRM
(max)
(typ)
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Repetitive peak forward current (tp = 5 s, f = 5kHz)
Maximum operating junction temperature
Storage temperature range
"A". ULTRA-FAST HIGH VOLTAGE DIODE
600V
20ns
1.5V
2A
Parameter
in Motor Control Freewheel applications and in
Booster diode applications in Power Factor Control
circuitries.
Packaged in SMC surface mount envelope, these
600V devices are particularly intended for use on
240V domestic mains.
A
SMC
- 65 to + 150
STTA206S
Value
K
600
600
125
50
8
Unit
°C
°C
V
V
A
A
1/8

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STTA206S Summary of contents

Page 1

... ULTRA-FAST HIGH VOLTAGE DIODE 2A 600V 20ns 1.5V in Motor Control Freewheel applications and in Booster diode applications in Power Factor Control circuitries. Packaged in SMC surface mount envelope, these 600V devices are particularly intended for use on 240V domestic mains. Parameter STTA206S A K SMC Value Unit 600 V 600 ...

Page 2

... STTA206S THERMAL AND POWER DATA Symbol Parameter R Junction to lead th(j-I) P Conduction power dissipation 1 (see fig Total power dissipation max Pmax = (P3 = 10% P1) STATIC ELECTRICAL CHARACTERISTICS (see Fig. 2) Symbol Parameter V Forward voltage drop Reverse leakage current R ** Test pulses widths : * tp = 380 s, duty cycle < duty cycle < ...

Page 3

... TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 SWITCHING REVERSE LOSSES LOSSES in the diode in the diode OFF : P3 Watts P2 Watts Watts (Fig. 2) (Fig. 3 & 4) DIODE: TURBOSWITCH "A" t/T STTA206S Watts SWITCHING LOSSES in the transistor due to the diode P2 Watts (Fig LOAD 3/8 ...

Page 4

... STTA206S APPLICATION DATA (Cont’d) Fig STATIC CHARACTERISTICS Fig TURN-OFF CHARACTERISTICS V TRANSISTOR / / trr = / / trr = tb/ta 4/8 Conduction losses : with Reverse losses : ...

Page 5

... Fig. 6: Switching OFF losses versus dIF/dt. P3(W) 0.35 Tj=125°C = 0.5 0.30 F=20KHz VR=400V 0. 0.20 0.15 0.10 0.05 0.00 1.4 1.6 1.8 2 Fig. 8: Switching losses in transistor due to the diode. P5(W) 5.0 Tj=125°C F=20KHz 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 STTA206S - Fmax fr IL=2A dIF/dt(A/us 100 120 140 160 180 200 VR=400V dIF/dt(A/us 100 120 140 160 180 200 IL=4A IL=4A IL=2A 5/8 ...

Page 6

... STTA206S Fig. 9: Forward voltage drop versus forward current (maximum values). IFM(A) 5E+1 1E+1 Tj=125°C 1E+0 1E-1 VFM(V) 1E-2 0.0 0.5 1.0 1.5 2.0 Fig. 11: Peak reverse recovery current versus dIF/dt (90% confidence). IRM( VR=400V Tj=125° dIF/dt(A/µ 100 Fig. 13: Softness factor (tb/ta) versus dIF/dt (typical values). ...

Page 7

... Fig. 17: Junction capacitance versus reverse voltage applied (typical values). C(pF VR( Fig. 16: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 300 250 200 150 100 F=1MHz 100 200 STTA206S IF=IF(av) Vfr=1.1*VFmax Tj=125°C dIF/dt(A/µ 100 120 140 160 180 200 7/8 ...

Page 8

... FOOTPRINT DIMENSIONS (in millimeters) 2.0 4.2 Type Marking STTA206S T51 Band indicates cathode Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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