BDT62 Inchange Semiconductor Company Limited, BDT62 Datasheet
BDT62
Manufacturer Part Number
BDT62
Description
Manufacturer
Inchange Semiconductor Company Limited
Datasheet
1.BDT62.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BDT62B
Manufacturer:
ST
Quantity:
20 000
INCHANGE Semiconductor
isc
DESCRIPTION
·DC Current Gain -h
·Collector-Emitter Sustaining Voltage-
·Complement to Type BDT63/A/B/C
APPLICATIONS
·Designed for use in audio amplifier output stages , general
ABSOLUTE MAXIMUM RATINGS(T
THERMAL CHARACTERISTICS
isc Website：www.iscsemi.cn
SYMBOL
SYMBOL
: V
purpose amplifier and high speed switching applications
R
R
V
V
V
T
I
P
th j-c
th j-c
CBO
CEO
EBO
I
CM
I
T
CEO(SUS)
stg
C
B
Silicon PNP Darlington Power Transistors
C
j
B
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
T
Junction Temperature
Storage Ttemperature Range
= -60V(Min)- BDT62; -80V(Min)- BDT62A;
C
=25℃
-100V(Min)- BDT62B; -120V(Min)- BDT62C
FE
PARAMETER
PARAMETER
= 1000(Min)@ I
BDT62
BDT62A
BDT62B
BDT62C
BDT62
BDT62A
BDT62B
BDT62C
a
=25
C
= -
℃
3A
)
-65~150
VALUE
-0.25
-100
-120
-100
-120
150
-60
-80
-60
-80
-10
-15
90
-5
MAX
1.39
70
UNIT
UNIT
℃/W
℃/W
W
℃
℃
V
V
V
A
A
A
isc
Product Specification
BDT62/A/B/C
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BDT62 Summary of contents
Page 1
... Silicon PNP Darlington Power Transistors DESCRIPTION ·DC Current Gain -h = 1000(Min ·Collector-Emitter Sustaining Voltage -60V(Min)- BDT62; -80V(Min)- BDT62A; CEO(SUS) -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type BDT63/A/B/C APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ...
Page 2
... BDT62B V = -50V =150℃ -120V BDT62C V = -60V =150℃ BDT62 V = -30V BDT62A V = -40V BDT62B V = -50V BDT62C V = -60V -5V -3A - -10A ...