VN1306N2 Supertex, Inc., VN1306N2 Datasheet
VN1306N2
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VN1306N2 Summary of contents
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... Order Number / Package D(ON) (min) TO-39 TO-92 0.5A — — 0.5A VN1306N2 — 0.5A — VN1310N3 Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in MOS devices ...
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Thermal Characteristics Package I (continuous)* D TO-39 0.4A TO-92 0.25A * I (continuous) is limited by max rated Electrical Characteristics Symbol Parameter BV Drain-to-Source DSS Breakdown Voltage V Gate Threshold Voltage GS(th) V Change in V with ...
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Typical Performance Curves Output Characteristics 2.0 1.6 1.2 0.8 0 (volts) DS Transconductance vs. Drain Current 0 25V DS 0.4 0.3 0.2 0 0.4 0.8 1.2 I (amperes) D Maximum ...
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Typical Performance Curves BV Variation with Temperature DSS 1.1 1.0 0.9 - Transfer Characteristics 1 25V DS 1.2 0.9 0.6 0 (volts) GS Capacitance vs. Drain-to-Source Voltage ...