M32L1632512A-8Q ETC-unknow, M32L1632512A-8Q Datasheet
M32L1632512A-8Q
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M32L1632512A-8Q Summary of contents
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... Clock time Frequency M32L1632512A-5Q 5ns 200MHz M32L1632512A-5SQ 5ns 200MHz M32L1632512A-6Q 6ns 166MHz M32L1632512A-6SQ 6ns 166MHz M32L1632512A-7Q 7ns 143MHz M32L1632512A-7SQ 7ns 143MHz M32L1632512A-8Q 8ns 125MHz M32L1632512A-8SQ 8ns 125MHz Publication Date : Jun. 2001 Revision : 1.6 M32L1632512A Access t RDL time@CL=3 (clk) 4.5ns 1 4.5ns 2 5.5ns 1 5.5ns 2 6 ...
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... COLUMN ADDRESS BUFFER BUFFER ADDRESS REGISTER CLOCK ADDRESS M32L1632512A DQi (i=0~31) DQMi REFRESH COUNTER ) VSS ...
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... Enables write per bit, block write and special mode register set. (Voltage referenced to V Symbol OUT DDQ T STG M32L1632512A INPUT FUNCTION t ss prior to new t after the clock and masks the output. SHZ ) SS Value Unit -1.0 ~ 4.6 V -1.0 ~ 4.6 V -55 ~ +150 i 1 ...
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... OUT DD = 3.3V 1MH A Z Symbol C IN1 C IN2 C OUT Symbol & & V SSQ pins are connected in chip. DDQ pins are connected in chip. SSQ M32L1632512A = 0V) Max Unit Note 3 +0 0.8 V Note -2mA OH 0 Â 5 Note 2 µ ...
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... Page Burst All Banks Activated, = CCD CCD (min RC(min) CKE 0. mA, CC CC(min), BWC(min CCD(min). t BWC(min). M32L1632512A /V =2.0V/0.8V IH(min) IL(max) Version Unit Note 3 230 210 195 170 mA 2 230 210 195 170 ...
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... SLZ - 5 - 5.5 t SHZ - All AC parameters are measured from half to half. M32L1632512A 0.3V Value 2.4V/0. 1. 1ns/1ns R F 1.4V See Fig 1.4V REF è 50 è Z0 =50 30pF (Fig Output Load Circuit ...
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... RP(min RAS(min) t RAS(max RC(min) t CDL(min RDL(min BPL(min BAL(min) t BDL(min) t CCD(min BWC(min) CAS latency = 3 CAS latency = 2 M32L1632512A Version Unit -6S -7 - 100 CLK 1 CLK 2 ...
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... MHZ(10.0ns ) 2 M32L1632512A- -7SQ ) CAS Frequency Latency 143 MHZ(7.0ns ) 3 125 MHZ(8.0ns ) 3 100 MHZ(10.0ns ) 2 83 MHZ(12.0ns ) 2 M32L1632512A- -8SQ ) CAS Frequency Latency 125 MHZ(8.0ns ) 3 100 MHZ(10.0ns ) 3 83 MHZ(12.0ns ) 2 75 MHZ(13.4ns ) 2 Elite Semiconductor Memory Technology Inc. t ...
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... Valid Don’t Care Logic High Logic Low ) M32L1632512A DSF DQM A10 A9 A8~ CODE Row Address H L Column H L ...
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... Elite Semiconductor Memory Technology Inc. MRS Bank Active Bank Active MRS SMRS With Write per bit Disable CAS Latency M32L1632512A t after the end of burst. RP Write H L Bank Active Normal With Write Write per bit Enable Burst Length Publication Date : Jun ...
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... Reserved Reserved Reserved Reserved Load Color Load Mask A6 Function A5 0 Disable 0 1 Enable 1 M32L1632512A Burst Length Type Interleave Reserved Reserved Reserved Reserved ...
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... Byte 2 Byte I/O23~ I/O16 DQ24 DQ16 DQ25 DQ17 DQ26 DQ18 DQ27 DQ19 DQ28 DQ20 DQ29 DQ21 DQ30 DQ22 DQ31 DQ23 M32L1632512A Interleave Interleave ...
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... NOP condition. 3.Both banks must be precharged now. 4.Perform a minimum of 2 Auto refresh cycles to stabilize the internal circuitry. 5.Perform a MODE REGISTER SET cycle to program the CAS latency, burst length and M32L1632512A (and V ) supply. DD DDQ reaches the desired voltage Publication Date : Jun ...
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... SGRAM operation. Refer to the table for specific codes for various burst length, addressing modes and CAS latencies. Elite Semiconductor Memory Technology Inc. M32L1632512A BANK ACTIVATE The bank activate command is used to select a random row in an idle bank. By asserting low on RAS and CS with desired row and bank addresses, a row access is initiated ...
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... A10 of the bank to be precharged. The precharge command can be asserted t anytime after RAS (min) activate command in the desired bank. “ defined as the minimum time required to precharge a bank. Publication Date : Jun. 2001 Revision : 1.6 M32L1632512A is satisfy from the bank t ” 15/54 ...
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... The self refresh mode is entered from all banks t after RP idle state by asserting low RAS , CAS and CKE with high Once the self refresh mode is entered, only CKE state M32L1632512A . The minimum number of clock Publication Date : Jun. 2001 Revision : 1.6 16/ ...
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... The color register is the same width as the data port of the chip width via a SWCBR where data present on the DQ pins is Publication Date : Jun. 2001 Revision : 1.6 M32L1632512A feature allowing the 17/54 ...
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... DQM masking provides independent data byte masking during normal write operations, except that the control is extended to the consecutive 8 columns of the block write. Elite Semiconductor Memory Technology Inc. M32L1632512A Timing Diagram to Illustrate t 1. 2CLK Cycle Block Write HIG H ...
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... Each bit of the mask register directly controls a corresponding bit plane. Byte masking (pixel masking for 8bpp system) for color DQi M32L1632512A Benefits ...
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... M32L1632512A ...
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... CL3 ) * M32L1632512A * ...
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... To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out. Elite Semiconductor Memory Technology Inc Hi M32L1632512A Publication Date : Jun. 2001 Revision : 1.6 22/54 ...
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... Block Write CMD M32L1632512A 2) Block Write xel * Publication Date : Jun ...
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... CMD DQ DQ Special Mode Register Set CMD ACT MRS M32L1632512A t from this point STO P * ACT SMR S ...
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... After self refresh entry, self refresh mode is kept while CKE is low. Elite Semiconductor Memory Technology Inc. 2) Power Down (=Precharge Power Down) Exit * CMD * CMD M32L1632512A CMD Publication Date : Jun. 2001 Revision : 1.6 25/54 ...
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... At MRS A2 =”001” auto precharge, should not be violated. RAS At MRS A2 =”010”. At MRS A2 =”011”. At MRS A2 =”111”. Wrap around mode (Infinite burst length) should be stopped by burst stop. RAS interrupt or CAS interrupt. M32L1632512A Publication Date : Jun. 2001 Revision : 1.6 26/54 ...
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... DQM3=0 DQM2 M32L1632512A should not be violated DQM1=0 ...
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... White DQ23=H Blue Green Blue Green Blue White White Green Blue Green Blue Green Blue White White Green M32L1632512A DQM1=0 DQM0=1 Color1=Yellow Color0=Red White DQ8=H White DQ0=L White DQ9=L White DQ1=H White DQ10=H White DQ2=H White DQ11=H White DQ3=H ...
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... Blue Blue Yellow Blue Blue Blue Blue Blue Blue Blue Yellow Blue I/O MASK PIXEL & I/O MASK M32L1632512A Yellow Red DQM1=0 DQM0 Green White ...
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... Term burst, Begin Read ; Latch CA ; Determine ILLEGAL L BA CA, AP Term burst, Begin Write ; Latch CA ; Determine CA, AP Term burst, Begin Write ; Latch CA ; Determine AP M32L1632512A ACTION Æ Row Active) Æ Row Active) Æ Row active Æ Row Active) Æ Æ Row Active) Row Active Publication Date : Jun ...
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... ILLEGAL Æ NOP Idle after Æ NOP Idle after ILLEGAL ILLEGAL ILLEGAL BA = Bank Address (A10 Column Address (A0~A7) M32L1632512A ACTION Note 2 3 Æ Æ Precharge) Precharge Æ 2 Æ Precharge) Precharge ...
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... Begin Clock Suspend next cycle Exit Clock Suspend next cycle Maintain Clock Suspend + one clock “ must be satisfy before any command other than exit. SS M32L1632512A ACTION Note Æ ÂÃÊ t after RC Æ ÂÃÊ t after RC Æ Æ ...
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... Elite Semiconductor Memory Technology Inc M32L1632512A ...
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... M32L1632512A ...
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... Bank B row active, enable write per bit function for bank B. 6. Block write/normal write is controlled by DSF. DSF Operation L Normal write H Block write Elite Semiconductor Memory Technology Inc. Operation Precharge Bank A Bank B Both Bank Operation Minimum cycle time t CCD t BWC M32L1632512A Publication Date : Jun. 2001 Revision : 1.6 35/54 ...
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... +CAS latency - RCD SAC M32L1632512A ...
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... before Row precharge, will be written. RDL M32L1632512A ...
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... M32L1632512A Publication Date : Jun ...
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... before internal precharge start. RAS M32L1632512A ...
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... after A Bank auto precharge starts. RP M32L1632512A ...
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... (=1CLK). BDL t (=1CLK). RDL M32L1632512A ...
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... Elite Semiconductor Memory Technology Inc M32L1632512A ...
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... ” prior to Row active command. SS M32L1632512A ...
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... required before exit from self refresh. RAS M32L1632512A Publication Date : Jun ...
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... Minimum 1 clock cycles should be met before new RAS activation. 3. Please refer to Mode Register Set table. Elite Semiconductor Memory Technology Inc. Auto Refresh Cycle M32L1632512A ...
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... Dimension in inch Min Norm Max 0.134 0.117 0.015 0.009 0.913 0.921 0.787 0.791 0.677 0.685 0.551 0.555 0.031 0.037 0.063 REF 0.026 REF 0 7 0.003 M32L1632512A SEE DETAIL "A" L1 DETAIL "A" A2 Publication Date : Jun. 2001 Revision : 1.6 L 53/54 ...
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... If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications. Elite Semiconductor Memory Technology Inc. Important Notice M32L1632512A Publication Date : Jun. 2001 Revision : 1.6 54/54 ...