K4F151611C-TL50 Samsung, K4F151611C-TL50 Datasheet

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K4F151611C-TL50

Manufacturer Part Number
K4F151611C-TL50
Description
DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin
Manufacturer
Samsung
Datasheet

Specifications of K4F151611C-TL50

Case
TSOP
K4F171611C, K4F151611C
K4F171612C, K4F151612C
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power
consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This
1Mx16 Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FEATURES
• Part Identification
• Active Power Dissipation
• Refresh Cycles
• Perfomance Range
Speed
K4F171611C
K4F171612C
K4F151611C
K4F151612C
-50
-60
- K4F171611C-J(T) (5V, 4K Ref.)
- K4F151611C-J(T) (5V, 1K Ref.)
- K4F171612C-J(T) (3.3V, 4K Ref.)
- K4F151612C-J(T) (3.3V, 1K Ref.)
Speed
-50
-60
Part
NO.
50ns
60ns
t
RAC
324
288
4K
3.3V
3.3V
V
5V
5V
15ns
15ns
CC
t
CAC
3.3V
Refresh
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
cycle
504
468
1K
110ns
4K
1K
90ns
t
RC
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
Normal
64ms
16ms
Refresh period
35ns
40ns
495
440
4K
t
PC
5V
Unit : mW
Remark
5V/3.3V
5V/3.3V
128ms
L-ver
770
715
1K
DESCRIPTION
(A0 - A9)
(A0 - A9)
A0-A11
A0 - A7
Note)
UCAS
LCAS
RAS
W
*1
*1
*1
: 1K Refresh
FUNCTIONAL BLOCK DIAGRAM
• Fast Page Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)
• Single +5V 10% power supply (5V product)
• Single +3.3V 0.3V power supply (3.3V product)
400mil packages
Control
Clocks
Row Address Buffer
Col. Address Buffer
Refresh Counter
Refresh Control
Refresh Timer
VBB Generator
Column Decoder
1,048,576 x16
Row Decoder
Memory Array
Cells
CMOS DRAM
Vcc
Vss
Data out
Data out
Data in
Data in
Lower
Buffer
Lower
Buffer
Upper
Buffer
Upper
Buffer
DQ0
DQ7
OE
DQ15
DQ8
to
to

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K4F151611C-TL50 Summary of contents

Page 1

... Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. FEATURES • Part Identification - K4F171611C-J(T) (5V, 4K Ref.) - K4F151611C-J(T) (5V, 1K Ref.) - K4F171612C-J(T) (3.3V, 4K Ref.) - K4F151612C-J(T) (3.3V, 1K Ref.) • Active Power Dissipation 3.3V ...

Page 2

... K4F171611C, K4F151611C K4F171612C, K4F151612C • K4F17(5)1611(2)C DQ0 2 DQ1 3 DQ2 4 DQ3 DQ4 7 DQ5 8 DQ6 9 DQ7 10 N RAS 14 *A11(N.C) 15 *A10(N. *A10 and A11 are N.C for K4F151611(2)C(5V/3.3V, 1K Ref. product 400mil 42 SOJ T : 400mil 50(44) TSOP II ...

Page 3

... K4F171611C, K4F151611C K4F171612C, K4F151612C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability ...

Page 4

... K4F171611C, K4F151611C K4F171612C, K4F151612C DC AND OPERATING CHARACTERISTICS Symbol Power I Don t care CC1 Normal I Don t care CC2 L I Don t care CC3 I Don t care CC4 Normal I Don t care CC5 L I Don t care CC6 I L Don t care CC7 I L Don t care CCS Operating Current (RAS and UCAS, LCAS cycling @t ...

Page 5

... K4F171611C, K4F151611C K4F171612C, K4F151612C CAPACITANCE (T = Parameter Input capacitance [A0 ~ A11] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition (5V device =5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V CC Test condition (3.3V device =3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V CC Parameter Random read or write cycle time Read-modify-write cycle time ...

Page 6

... K4F171611C, K4F151611C K4F171612C, K4F151612C AC CHARACTERISTICS (Continued) Parameter Data set-up time Data hold time Refresh period (1K, Normal) Refresh period (4K, Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge to W delay time ...

Page 7

... K4F171611C, K4F151611C K4F171612C, K4F151612C NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved. Input voltage levels are Vih/Vil Transition times are measured between V Measured with a load equivalent to 2 TTL(5V)/1TTL(3.3V) loads and 100pF. ...

Page 8

... K4F171611C, K4F151611C K4F171612C, K4F151612C 13 referenced to the later CAS falling edge at word read-modify-write cycle. CWD t 14. is specified from W falling edge to the earlier CAS rising edge CWL 15 referenced to the earlier CAS falling edge before RAS transition low. CSR 16 referenced to the later CAS rising edge after RAS transition low. ...

Page 9

... K4F171611C, K4F151611C K4F171612C, K4F151612C WORD READ CYCLE RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH CRP t RCD t CSH CRP t RCD t RAD t t RAH ...

Page 10

... K4F171611C, K4F151611C K4F171612C, K4F151612C LOWER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS CRP t CSH CRP t RCD t RAD ...

Page 11

... K4F171611C, K4F151611C K4F171612C, K4F151612C UPPER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH CRP t RCD CRP ...

Page 12

... K4F171611C, K4F151611C K4F171612C, K4F151612C WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH CRP t RCD ...

Page 13

... K4F171611C, K4F151611C K4F171612C, K4F151612C LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS CRP t CSH ...

Page 14

... K4F171611C, K4F151611C K4F171612C, K4F151612C UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...

Page 15

... K4F171611C, K4F151611C K4F171612C, K4F151612C WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH CRP t RCD ...

Page 16

... K4F171611C, K4F151611C K4F171612C, K4F151612C LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS CRP t CSH ...

Page 17

... K4F171611C, K4F151611C K4F171612C, K4F151612C UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH CRP ...

Page 18

... K4F171611C, K4F151611C K4F171612C, K4F151612C WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RAS t t RCD RSH t t RCD ...

Page 19

... K4F171611C, K4F151611C K4F171612C, K4F151612C LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RAS t t RCD RSH t t RAD ...

Page 20

... K4F171611C, K4F151611C K4F171612C, K4F151612C UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RAS t t RCD RSH t RAD ...

Page 21

... K4F171611C, K4F151611C K4F171612C, K4F151612C FAST PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 22

... K4F171611C, K4F151611C K4F171612C, K4F151612C FAST PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 23

... K4F171611C, K4F151611C K4F171612C, K4F151612C FAST PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 24

... K4F171611C, K4F151611C K4F171612C, K4F151612C FAST PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...

Page 25

... K4F171611C, K4F151611C K4F171612C, K4F151612C FAST PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...

Page 26

... K4F171611C, K4F151611C K4F171612C, K4F151612C FAST PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...

Page 27

... K4F171611C, K4F151611C K4F171612C, K4F151612C FAST PAGE MODE WORD READ-MODIFY-WRITE CYCLE RAS CRP UCAS CRP LCAS RAD t ASR t ASC ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t CSH t PRWC ...

Page 28

... K4F171611C, K4F151611C K4F171612C, K4F151612C FAST PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD t ASR t ASC ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...

Page 29

... K4F171611C, K4F151611C K4F171612C, K4F151612C FAST PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD t ASR t ASC ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...

Page 30

... K4F171611C, K4F151611C K4F171612C, K4F151612C RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : Don t care ...

Page 31

... K4F171611C, K4F151611C K4F171612C, K4F151612C HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t t RCD RSH ...

Page 32

... K4F171611C, K4F151611C K4F171612C, K4F151612C HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS CRP t t RCD ...

Page 33

... K4F171611C, K4F151611C K4F171612C, K4F151612C CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS UCAS LCAS DQ0 ~ DQ7 OFF DQ8 ~ DQ15 RPC CSR CSR CMOS DRAM t t RASS ...

Page 34

... K4F171611C, K4F151611C K4F171612C, K4F151612C PACKAGE DIMENSION 42 SOJ 400mil #42 #1 0.0375 (0.95) 50(44) TSOP(II) 400mil 0.034 (0.875) 1.091 (27.71) MAX 1.070 (27.19) 1.080 (27.43) 0.050 (1.27) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 0.841 (21.35) MAX 0.821 (20.85) 0.829 (21.05) 0.0315 (0.80) 0.002 (0.05) 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.027 (0.69) MIN Units : Inches (millimeters) ...

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