KM48C8104CS-6 Samsung, KM48C8104CS-6 Datasheet
KM48C8104CS-6
Related parts for KM48C8104CS-6
KM48C8104CS-6 Summary of contents
Page 1
... Refresh cycle(4K Ref Ref.), access time (-5 or -6), package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 8Mx8 EDO Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power con- sumption and high reliability. ...
Page 2
KM48C8004C, KM48C8104C • KM48V80(1)04CK DQ0 2 DQ1 3 DQ2 4 DQ3 5 N RAS ...
Page 3
KM48C8004C, KM48C8104C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" ...
Page 4
KM48C8004C, KM48C8104C DC AND OPERATING CHARACTERISTICS Symbol Power I Don't care CC1 I Normal Don't care CC2 I Don't care CC3 I Don't care CC4 I Normal Don't care CC5 I Don't care CC6 Operating Current (RAS ...
Page 5
KM48C8004C, KM48C8104C CAPACITANCE (T = Parameter Input capacitance [A0 ~ A12] Input capacitance [RAS, CAS, W, OE] Output capacitance [DQ0 - DQ7] AC CHARACTERISTICS ( Test condition : V =5.0V 10%, Vih/Vil=2.6/0.7V, Voh/Vol=2.0/0.8V CC Parameter ...
Page 6
KM48C8004C, KM48C8104C AC CHARACTERISTICS (Continued) Parameter Data hold time Refresh period (4K, Normal) Refresh period (8K, Normal) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS set-up time ...
Page 7
KM48C8004C, KM48C8104C TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time ...
Page 8
KM48C8004C, KM48C8104C NOTES 1. An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles before proper device operation is achieved (min) and V (max) are reference levels for measuring ...
Page 9
KM48C8004C, KM48C8104C READ CYCLE RAS CAS ASR ADDRESS ...
Page 10
KM48C8004C, KM48C8104C WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ADDRESS ...
Page 11
KM48C8004C, KM48C8104C WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CAS ASR ADDRESS ...
Page 12
KM48C8004C, KM48C8104C READ - MODIFY - WRITE CYCLE RAS CRP CAS ASR ROW A ADDR ...
Page 13
KM48C8004C, KM48C8104C HYPER PAGE READ CYCLE RAS CRP CAS ASR RAH ROW A ADDR ...
Page 14
KM48C8004C, KM48C8104C HYPER PAGE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR RAH ROW ...
Page 15
KM48C8004C, KM48C8104C HYPER PAGE READ-MODIFY-WRITE CYCLE RAS CRP CAS RAD t ASR t ASC ROW A ADDR ...
Page 16
KM48C8004C, KM48C8104C HYPER PAGE READ AND WRITE MIXED CYCLE RAS CAS t RAD RAH t ASR ROW A ADDR ...
Page 17
KM48C8004C, KM48C8104C RAS - ONLY REFRESH CYCLE* NOTE : W, OE Don t care OPEN OUT RAS CRP CAS ASR ...
Page 18
KM48C8004C, KM48C8104C HIDDEN REFRESH CYCLE ( READ ) RAS CRP CAS ASR ADDRESS ...
Page 19
KM48C8004C, KM48C8104C HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CAS ASR ADDRESS ...
Page 20
KM48C8004C, KM48C8104C CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : OE Don t care RAS CAS DQ0 ~ DQ3(7) t CEZ V - ...
Page 21
KM48C8004C, KM48C8104C PACKAGE DIMENSION 32 SOJ 400mil #32 #1 0.0375 (0.95) 0.050 (1.27) 32 TSOP(II) 400mil 0.037 (0.95) 0.050 (1.27) 0.841 (21.36) MAX 0.820 (20.84) 0.830 (21.08) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 0.841 (21.35) MAX 0.821 (20.85) ...