BTA208S-600B NXP Semiconductors, BTA208S-600B Datasheet - Page 6

• Manufacturer Part Number: BTA208S-600B
• Description: Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BTA208S-600B
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dI
t
GT
L
H
D
gt
T
GT
com
D
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
gate-controlled turn-on
time
Conditions
V
T
V
T
V
T
V
T
V
T
V
T
V
I
V
see
V
see
V
V
waveform; gate open circuit
V
dV
snubberless condition; see
I
dI
All information provided in this document is subject to legal disclaimers.
T
TM
j
j
j
j
j
j
D
D
D
D
D
D
D
D
D
D
DM
D
G
= 10 A; T
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
com
/dt = 5 A/µs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 600 V; T
= 400 V; T
= 12 A; V
Figure 11
Figure 11
= 402 V; T
/dt = 20 V/µs; gate open circuit;
Rev. 3 — 13 April 2011
j
T
T
T
G
G
G
T
j
= 25 °C; see
T
D
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T
= 25 °C; see
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
j
j
= 0.1 A; T
= 125 °C
= 125 °C; I
= 600 V; I
j
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
= 125 °C; exponential
j
= 25 °C;
j
G
= 125 °C;
T(RMS)
Figure 10
= 0.1 A;
Figure 9
Figure 12
= 8 A;
BTA208S-600B
Min
2
2
2
-
-
-
-
-
-
0.25
-
1000
-
-
Typ
18
21
34
31
34
30
31
1.3
0.7
0.4
0.1
4000
14
2
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
Max
50
50
50
60
90
60
60
1.65
1.5
-
0.5
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
A/ms
µs
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