BTA216B-800B NXP Semiconductors, BTA216B-800B Datasheet - Page 5

Planar passivated high commutation three quadrant triac in a SOT404 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur

BTA216B-800B

Manufacturer Part Number
BTA216B-800B
Description
Planar passivated high commutation three quadrant triac in a SOT404 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTA216B-800B
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BTA216B-800B118
Manufacturer:
NXP Semiconductors
Quantity:
135
October 1997
Triacs
high commutation
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
Semiconductors
-50
-50
IGT(25 C)
(T
3
2
1
0
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BTA216
TRIAC
TRIAC
Tj / C
Tj / C
Tj / C
50
50
50
100
100
T2+ G-
T2- G-
100
T2+ G+
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of change of commutating
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
0.001
50
40
30
20
10
current dI
100
0.01
0
10
0.1
10
0
10us
1
IT / A
1
20
Vo = 1.195 V
Rs = 0.018 Ohms
Tj = 125 C
dIcom/dt (A/ms)
Zth j-mb (K/W)
Tj = 25 C
0.5
0.1ms
40
com
/dt versus junction temperature.
pulse width t
1ms
1
60
unidirectional
tp / s
typ
BTA216
BT139
VT / V
10ms
Tj / C
BT139
1.5
80
BTA216B series B
P
D
bidirectional
p
.
Product specification
0.1s
100
2
max
t
p
120
th j-mb
2.5
1s
t
Rev 1.100
, versus
10s
140
3

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