BTA316-800B0 NXP Semiconductors, BTA316-800B0 Datasheet - Page 7

• Manufacturer Part Number: BTA316-800B0
• Description: Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BTA316-800B0
Preliminary data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dI
GT
L
H
D
T
GT
com
D
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
Conditions
V
see
V
see
V
see
V
see
V
see
V
see
V
I
V
see
V
see
V
V
waveform; gate open circuit
V
dV
gate open circuit
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T
D
D
D
D
D
D
D
D
D
D
DM
D
= 18 A; T
com
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 800 V; T
= 400 V; T
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
Figure 11
Figure 11
= 536 V; T
/dt = 20 V/µs; (snubberless condition);
Rev. 2 — 17 November 2011
j
T
T
T
G
G
G
T
j
= 25 °C; see
T
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
= 0.1 A; T
= 25 °C; see
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
j
j
= 0.1 A; T
= 125 °C
= 125 °C; I
j
= 125 °C; exponential
j
= 25 °C;
j
= 125 °C;
T(RMS)
Figure 10
Figure 9
j
j
j
j
= 25 °C;
j
= 16 A;
= 25 °C;
j
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
BTA316-800B0
Min
10
10
10
-
-
-
-
-
-
0.25
-
2500
20
Typ
-
-
-
-
-
-
-
1.3
0.8
0.4
0.1
-
-
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
Max
50
50
50
60
90
60
60
1.5
1.5
-
0.5
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
A/ms
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