BAP51-06W NXP Semiconductors, BAP51-06W Datasheet - Page 3

Two planar PIN diodes in common anode configuration in a SOT323 small SMD plastic package

BAP51-06W

Manufacturer Part Number
BAP51-06W
Description
Two planar PIN diodes in common anode configuration in a SOT323 small SMD plastic package
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
BAP51-06W
Manufacturer:
NXP
Quantity:
51 000
NXP Semiconductors
Table 6.
T
[1]
BAP51-06W_1
Symbol
ISL
L
L
Product data sheet
j
L
Fig 1.
ins
S
= 25 C unless otherwise specified.
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
(fF)
500
400
300
200
100
C
d
0
0
f = 100 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
Characteristics
Parameter
isolation
insertion loss
charge carrier life time
series inductance
4
j
= 25 C.
8
…continued
12
Conditions
V
I
I
I
when switched from I
R
I
F
F
F
F
16
R
L
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
= 0.5 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
= 1 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
= 10 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
= 100 mA; f = 100 MHz
= 100 ; measured at I
= 0 V
V
R
mld508
(V)
20
Rev. 01 — 26 May 2008
F
= 10 mA to I
Fig 2.
R
( )
10
= 3 mA
r
10
D
10
10
1
2
1
f = 100 MHz; T
Diode forward resistance as a function of
forward current; typical values
1
R
= 6 mA;
1
j
= 25 C.
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
General purpose PIN diode
BAP51-06W
10
Typ
17
13
12
0.44
0.50
0.54
0.33
0.39
0.43
0.19
0.24
0.28
0.55
1.6
© NXP B.V. 2008. All rights reserved.
I
F
(mA)
-
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
mld507
10
2
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
nH
s
3 of 8

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