BLF6G20-180PN NXP Semiconductors, BLF6G20-180PN Datasheet
BLF6G20-180PN
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BLF6G20-180PN Summary of contents
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... BLF6G20-180PN Power LDMOS transistor Rev. 03 — 30 March 2009 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...
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... RF power amplifiers for W-CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G20-180PN - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T case T j ...
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... Application information = 1872.5 MHz unless otherwise specified class-AB production test circuit. case Conditions output peak-to-average ratio P L(AV) at 0.01 % probability on CCDF Rev. 03 — 30 March 2009 BLF6G20-180PN Power LDMOS transistor Conditions case L(AV) Min = 0 ...
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... NXP Semiconductors 7.1 Ruggedness in class-AB operation The BLF6G20-180PN is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 1600 mA Fig (dB 100 1600 mA 1880.1 MHz. 2 Fig 2. ...
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... ACPR, D IMD3 (%) (dBc ( 1867.5 MHz; 1 Fig 7. Rev. 03 — 30 March 2009 BLF6G20-180PN Power LDMOS transistor 1600 mA 1872.5 MHz 1877.5 MHz; carrier spacing 5 MHz. 2 2-carrier W-CDMA adjacent channel power ratio as a function of load power ...
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... Fig 8. Test circuit for operation at 1805 MHz and 1880 MHz BLF6G20-180PN_3 Product data sheet C3 C9 C13 Rev. 03 — 30 March 2009 BLF6G20-180PN Power LDMOS transistor C5 C14 C11 output C10 C12 C4 001aai024 © NXP B.V. 2009. All rights reserved. ...
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... ATC multilayer ceramic chip capacitor ATC multilayer ceramic chip capacitor ATC multilayer ceramic chip capacitor TDK multilayer ceramic chip capacitor AVX multilayer ceramic chip capacitor electrolytic capacitor chip resistor chip resistor Rev. 03 — 30 March 2009 BLF6G20-180PN Power LDMOS transistor C14 C5 C13 C11 C6 C7 C10 C12 C4 ...
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... F H 31.52 9.50 9.53 1.75 17.12 25.53 13.72 30.96 9.30 9.27 1.50 16.10 25.27 1.241 0.374 0.375 0.069 0.674 1.005 0.540 1.219 0.366 0.365 0.634 0.059 0.995 REFERENCES JEDEC EIAJ Rev. 03 — 30 March 2009 BLF6G20-180PN Power LDMOS transistor 3.73 3.30 2.31 41.28 10 ...
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... Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access Data sheet status Product data sheet Preliminary data sheet Objective data sheet Rev. 03 — 30 March 2009 BLF6G20-180PN Power LDMOS transistor Change notice Supersedes - BLF6G20-180PN_2 - BLF6G20-180PN_1 - - © NXP B.V. 2009. All rights reserved ...
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... Export might require a prior authorization from national authorities. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 30 March 2009 BLF6G20-180PN Power LDMOS transistor © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G20-180PN_3 All rights reserved. Date of release: 30 March 2009 ...