STM8AF6266 STMicroelectronics, STM8AF6266 Datasheet - Page 62

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STM8AF6266

Manufacturer Part Number
STM8AF6266
Description
STM8AF62 Standard Line
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8AF6266

Max Fcpu
16 MHz
Flash Program Memory
16 to 32 Kbytes Flash; data retention 20 years at 55 °C after 1 kcycle
Data Memory
0.5 to 1 Kbyte true data EEPROM; endurance 300 kcycles
Ram
1 to 2 Kbytes
Advanced Control Timer
16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

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Electrical characteristics
10.3.6
Table 37.
1. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production.
2. Data based on characterization results, not tested in production.
62/91
V
V
V
V
V
R
t
I
I
I
I
Symbol
R
lkg
lkg ana
lkg(inj)
DDIO
IL
IH
hys
OH
OL
pu
, t
F
Input low level voltage
Input high level voltage
Hysteresis
Output high level voltage
Output low level voltage
Pull-up resistor
Rise and fall time
(10% - 90%)
Digital input pad leakage
current
Analog input pad leakage
current
Leakage current in
adjacent I/O
Total current on either
V
DDIO
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
unused pins must be kept at a fixed voltage, using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
I/O static characteristics
or V
Parameter
(1)
SSIO
(2)
Standard and high sink I/Os
Including injection currents
Standard I/0, V
Standard I/0, V
High sink and true open
Standard I/0, V
Standard I/0, V
Injection current ±4 mA
-40 °C < T
-40 °C < T
V
drain I/0, V
DD
V
V
V
SS
SS
Load = 50 pF
Load = 50 pF
SS
Conditions
Doc ID 14952 Rev 5
= 5 V, V
I = 1.5 mA
I = 1.5 mA
Fast I/Os
I = 3 mA
I = 8 mA
I = 3 mA
V
V
V
IN
IN
A
IN
A
DD
< 125 °C
< 150 °C
IN
DD
DD
DD
DD
V
= 5 V
= V
V
V
DD
DD
DD
= 5 V,
= 3 V,
= 5 V
= 3 V
SS
DD
and T
V
V
0.7 x V
DD
DD
-0.3 V
A
Min
35
- 0.5 V
- 0.4 V
unless otherwise specified. All
-
-
-
-
-
-
-
-
-
-
-
DD
STM8AF61xx, STM8AF62xx
0.1 x
V
Typ
50
DD
-
-
-
-
-
-
-
-
-
-
-
-
V
0.3 x V
DD
125
±250
±500
20
±1
Max
0.5
0.6
0.4
+ 0.3 V
65
±1
60
-
-
-
(2)
(2)
(2)
DD
Unit
mA
µA
nA
µA
ns
V

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