STM8S003K3 STMicroelectronics, STM8S003K3 Datasheet - Page 85

• Manufacturer Part Number: STM8S003K3
• Description: Value line, 16 MHz STM8S 8-bit MCU, 8 Kbytes Flash, 128 bytes data EEPROM
• Manufacturer: STMicroelectronics

Specifications of STM8S003K3

• Program Memory: 8 Kbytes Flash; data retention 20 years at 55 °C after 100 cycles
• Data Memory: 128 bytes of true data EEPROM; endurance up to 100 000 write/erase cycles
• Ram: 1 Kbytes
• Advanced Control Timer: 16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

STM8S003K3 STM8S003F3
9.3.11
9.3.11.1
9.3.11.2
3. End point correlation line
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
While executing a simple application (toggling 2 LEDs through I/O ports), the product is
stressed by two electromagnetic events until a failure occurs (indicated by the LEDs).
•
•
A device reset allows normal operations to be resumed. The test results are given in the table
below based on the EMS levels and classes defined in application note AN1709 (EMC design
guide for STMicrocontrollers).
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
E
curves.
E
E
E
one.
E
point correlation line.
FESD: Functional electrostatic discharge (positive and negative) is applied on all pins of
the device until a functional disturbance occurs. This test conforms with the IEC 61000-4-2
standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with
the IEC 61000-4-4 standard.
T
O
G
D
L
= Integral linearity error: maximum deviation between any actual transition and the end
= Total unadjusted error: maximum deviation between the actual and the ideal transfer
= Differential linearity error: maximum deviation between actual steps and the ideal
= Offset error: deviation between the first actual transition and the first ideal one.
= Gain error: deviation between the last ideal transition and the last actual one.
V AIN
R AIN
C AIN
Figure 43: Typical application with ADC
DocID018576 Rev 2
AINx
V DD
V T
0.6 V
V T
0.6 V
I L
± 1 µA
conversion
10-bit A/D
Electrical characteristics
STM8
C ADC
DD
and V
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SS