AP2301AGN Advanced Power Electronics Corp., AP2301AGN Datasheet
AP2301AGN
Specifications of AP2301AGN
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AP2301AGN Summary of contents
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... Operating Junction Temperature Range J Thermal Data Symbol Rthj-amb Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-23 G Parameter Parameter 3 AP2301AGN RoHS-compliant Product BV -20V DSS R 97mΩ DS(ON 3. Rating Units - -3.3 -2 ...
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... AP2301AGN Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 1 - -4.5V GS 1.4 1.2 1 0.8 0.6 - Fig 4. Normalized On-Resistance 1.4 1 0.8 0.6 -50 1.6 Fig 6. Gate Threshold Voltage v.s. AP2301AGN o C -5.0V -4.5V -3.5V -2.5V 65mΩ -1. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 2.01E+ 100 o T ...
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... AP2301AGN - -16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...