AP2303GN Advanced Power Electronics Corp., AP2303GN Datasheet - Page 3

• Manufacturer Part Number: AP2303GN
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2303GN

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 240
• Rds(on) / Max(m?) Vgs@4.5v: 460
• Qg (nc): 6.2
• Qgs (nc): 1.4
• Qgd (nc): 0.3
• Id(a): -1.9
• Pd(w): 1.38
• Configuration: Single P
• Package: SOT-23

10
250
200
150
100
10
8
6
4
2
0
1
0
0
0
Fig 3. On-Resistance v.s. Gate Voltage
0.1
3
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
T
T
A
j
=150
=25
0.3
-V
-V
-V
Reverse Diode
o
1
o
C
DS
GS
C
SD
5
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.5
2
0.7
7
3
T
0.9
j
=25
I
T
D
A
9
=-1.3A
o
=25
C
V
4
G
1.1
℃
=-4.0V
-10V
-8.0V
-6.0V
-5.0V
11
1.3
5
10
1.8
1.6
1.4
1.2
0.8
0.6
8
6
4
2
0
3
2
1
0
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
T
Fig 6. Gate Threshold Voltage v.s.
A
=150
I
V
D
G
=-1.7A
= -10V
-V
Junction Temperature
1
o
C
DS
T
0
0
T
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
2
50
50
3
AP2303GN
100
100
V
o
o
C)
4
G
C)
=-4.0V
-10V
-8.0V
-6.0V
-5.0V
150
5
150
3