AP2531GY Advanced Power Electronics Corp., AP2531GY Datasheet

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device

AP2531GY

Manufacturer Part Number
AP2531GY
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2531GY

Vds
16V
Vgs
±8V
Rds(on) / Max(m?) Vgs@4.5v
58
Rds(on) / Max(m?) Vgs@2.5v
70
Rds(on) / Max(m?) Vgs@1.8v
85
Qg (nc)
7
Qgs (nc)
0.6
Qgd (nc)
2
Id(a)
3.5
Pd(w)
1.14
Configuration
Complementary N-P
Package
SOT-26

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▼ Low Gate Charge Drive
▼ Low On-resistance
▼ Surface Mount Package
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is widely used for all commercial-industrial
applications.
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Parameter
SOT-26
Parameter
D1
1
S1
3
3
D2
G1
S2
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
3
N-CH BV
P-CH BV
RoHS-compliant Product
16
+8
3.5
2.8
10
G1
-55 to 150
-55 to 150
Rating
1.14
0.01
R
I
R
I
D
D
DS(ON)
DS(ON)
P-channel
DSS
DSS
Value
-2.5
110
-16
-10
-2
+8
S1
D1
AP2531GY
G2
125mΩ
58mΩ
201006094
-2.5A
-16V
3.5A
Units
W/℃
℃/W
16V
Unit
W
V
V
A
A
A
D2
S2
1

Related parts for AP2531GY

AP2531GY Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-26 G1 N-channel Parameter AP2531GY RoHS-compliant Product N-CH BV DSS R 58mΩ DS(ON) I 3.5A D P-CH BV -16V DSS R 125mΩ DS(ON) I -2. ...

Page 2

... AP2531GY N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient /ΔT ΔBV DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... V =-12V , =-10V DS V =-4. =-10V =3.3Ω, =10Ω = =-10V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-0.9A AP2531GY Min. Typ. Max. -16 - =-1mA - 0. =-1. =- =-250uA - =-5V ...

Page 4

... AP2531GY N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 320 220 120 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 5

... DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 AP2531GY f=1.0MHz Drain-to-Source Voltage (V) DS Fig 8. Typical Capacitance Characteristics Duty factor=0.5 0.2 0 0.05 Duty factor = t/T Peak 0. 180℃/W thja 0 ...

Page 6

... AP2531GY P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 550 450 350 250 150 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage 2.0 1.5 1 =150 C j 0.5 0.0 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 1s DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 C -4. Fig 12. Gate Charge Waveform AP2531GY f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0 0.05 Duty factor = t/T Peak thja ...

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