AP2603GY Advanced Power Electronics Corp., AP2603GY Datasheet
AP2603GY
Specifications of AP2603GY
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AP2603GY Summary of contents
Page 1
... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-26 D Parameter 3 3 1,2 Parameter 3 AP2603GY Pb Free Plating Product BV -20V DSS R 65mΩ DS(ON) I -5. Rating Units -20 ± -20 2 0.016 W/℃ ...
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... AP2603GY Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... I = -4.2A =-4. =-4. -4. =25 C 1.4 1.2 1 0.8 0 -50 Fig 4. Normalized On-Resistance 1.5 1 0.5 0 -50 1.6 Fig 6. Gate Threshold Voltage v.s. AP2603GY -5. -4.0V 65mΩ -3. -2. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 2.01E+ 100 Junction Temperature ( ...
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... AP2603GY -4. -16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...