AP2604GY Advanced Power Electronics Corp., AP2604GY Datasheet

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... Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-26 D Parameter 10V 10V GS 1 Parameter 3 AP2604GY RoHS-compliant Product BV 30V DSS R 45mΩ DS(ON Rating Units 30 +20 5.5 4 0.016 W/℃ ...

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... AP2604GY Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... Fig 2. Typical Output Characteristics 1.8 I =4. =10V G 1 1.4 1.2 1.0 0.8 0.6 11 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2604GY o C 10V 7.0V 5.0V 4.5V V =3. 1.5 2 2 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o ...

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... AP2604GY 16 I =4. =15V DS V =20V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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... Package Outline : SOT- Part Marking Information & Packing : SOT-26 Y4SS ADVANCED POWER ELECTRONICS CORP 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number : Y4 Date Code SS:2004,2008,2012… SS:2003,2007,2011… SS:2002,2006,2010… SS:2001,2005,2009… ...