AP2606AGY-HF Advanced Power Electronics Corp., AP2606AGY-HF Datasheet
AP2606AGY-HF
Specifications of AP2606AGY-HF
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AP2606AGY-HF Summary of contents
Page 1
... Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-26 Parameter 10V 10V GS 1 Parameter 3 AP2606AGY-HF Halogen-Free Product BV DSS R 28mΩ DS(ON Rating 30 + -55 to 150 ...
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... AP2606AGY-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... D V =10V G 1.6 1.4 1.2 1.0 0.8 0.6 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 I =250uA D 1 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2606AGY-HF 10V o C 7.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 o , Junction Temperature ( 100 Junction Temperature ( 150 150 ...
Page 4
... AP2606AGY- = =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...