AP2607AGY-HF Advanced Power Electronics Corp., AP2607AGY-HF Datasheet

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device

AP2607AGY-HF

Manufacturer Part Number
AP2607AGY-HF
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2607AGY-HF

Vds
-20V
Vgs
±8V
Rds(on) / Max(m?) Vgs@4.5v
52
Rds(on) / Max(m?) Vgs@2.5v
65
Rds(on) / Max(m?) Vgs@1.8v
90
Qg (nc)
13
Qgs (nc)
2.1
Qgd (nc)
5
Id(a)
-5
Pd(w)
2
Configuration
Single P
Package
SOT-26
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
▼ Halogen Free & RoHS Compliant Product
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is widely used for all commercial-industrial
applications.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
D
S
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
SOT-26
-20
+ 8
-20
DS(ON)
-5
-4
AP2607AGY-HF
2
DSS
Value
D
62.5
D
S
D
D
52mΩ
201104222
-20V
Units
℃/W
-5A
Unit
G
W
V
V
A
A
A
1

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AP2607AGY-HF Summary of contents

Page 1

... Storage Temperature Range STG T Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter Parameter 3 AP2607AGY-HF Halogen-Free Product BV -20V D DSS R 52mΩ DS(ON SOT-26 ...

Page 2

... AP2607AGY-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 -5A D =-4. -4. 1.6 o =25 C 1.4 1.2 1 0.8 0 -50 Fig 4. Normalized On-Resistance 1 0.5 0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. AP2607AGY-HF o -5. -4.5V -3.5V -2.5V 65mΩ -2. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 2.01E+ ...

Page 4

... AP2607AGY- - -10V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

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