AP2732GK Advanced Power Electronics Corp., AP2732GK Datasheet
AP2732GK
Specifications of AP2732GK
Related parts for AP2732GK
AP2732GK Summary of contents
Page 1
... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-223 G Parameter Parameter 3 AP2732GK RoHS-compliant Product BV 30V DSS R 26mΩ DS(ON Rating Units 30 +20 8.6 6 ...
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... AP2732GK Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV /ΔT Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... V Fig 2. Typical Output Characteristics 1 =10V G 1.4 1.0 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 1 1.0 0.6 0.2 1.2 -50 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2732GK 10V o T =150 C A 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...
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... AP2732GK =15V DS V =20V =25V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...