AP2732GK Advanced Power Electronics Corp., AP2732GK Datasheet

AP2732GK

Manufacturer Part Number
AP2732GK
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2732GK

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
26
Rds(on) / Max(m?) Vgs@4.5v
40
Qg (nc)
9
Qgs (nc)
2
Qgd (nc)
5
Id(a)
8.6
Pd(w)
2.7
Configuration
Single N
Package
SOT-223
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching, low on-
resistance and cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
SOT-223
D
G
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
S
3
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
0.02
+20
8.6
6.8
2.7
G
30
30
DS(ON)
DSS
Value
45
AP2732GK
D
S
26mΩ
201011092
8.6A
Units
W/℃
℃/W
30V
Unit
W
V
V
A
A
A
1

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AP2732GK Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-223 G Parameter Parameter 3 AP2732GK RoHS-compliant Product BV 30V DSS R 26mΩ DS(ON Rating Units 30 +20 8.6 6 ...

Page 2

... AP2732GK Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV /ΔT Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... V Fig 2. Typical Output Characteristics 1 =10V G 1.4 1.0 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 1 1.0 0.6 0.2 1.2 -50 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2732GK 10V o T =150 C A 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...

Page 4

... AP2732GK =15V DS V =20V =25V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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