AP2852GO Advanced Power Electronics Corp., AP2852GO Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP2852GO

Manufacturer Part Number
AP2852GO
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2852GO

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
32
Rds(on) / Max(m?) Vgs@4.5v
48
Qg (nc)
8
Qgs (nc)
3
Qgd (nc)
5
Id(a)
5.5
Pd(w)
1.38
Configuration
Complementary N-P
Package
TSSOP-8
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Low On-resistance
▼ ▼ ▼ ▼ Fast Switching Perfromance
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
Parameter
1
D2
3
3
S2
TSSOP-8
S2
G2
3
D1
S1
S1
G1
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
N-CH BV
P-CH BV
Max.
±20
30
5.5
4.4
30
Pb Free Plating Product
G1
-55 to 150
-55 to 150
Rating
1.38
0.01
R
I
R
I
D
D
P-channel
DS(ON)
DS(ON)
DSS
DSS
Value
-4.4
-3.5
±20
-30
-30
D1
S1
90
AP2852GO
G2
32mΩ
50mΩ
-4.4A
-30V
Units
W/℃
℃/W
30V
5.5A
Unit
200817041
W
V
V
A
A
A
D2
S2

Related parts for AP2852GO

AP2852GO Summary of contents

Page 1

... Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET TSSOP-8 D1 N-channel Parameter 3 AP2852GO Pb Free Plating Product N-CH BV 30V DSS R 32mΩ DS(ON) I 5.5A D P-CH BV -30V DSS R 50mΩ DS(ON) I -4. ...

Page 2

... AP2852GO N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... =- =-24V DS V =-4. =-15V =3.3Ω, =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-1.2A =-4A dI/dt=-100A/µs AP2852GO Min. Typ. Max. Units -30 - =-1mA - -0. =-250uA - ...

Page 4

... AP2852GO N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0.01 1s 10s DC 0.001 0.0001 10 100 Fig 10. Effective Transient Thermal Impedance t t d(off) f AP2852GO f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak ...

Page 6

... AP2852GO P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 7

... Fig 11. Switching Time Waveform 1000 100 0.1 1ms 10ms 100ms 0.01 1s 10s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance t t d(off) f AP2852GO Drain-to-Source Voltage (V) DS Fig 8. Typical Capacitance Characteristics Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse Duty factor = t/T Peak ...

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