AP3310GH Advanced Power Electronics Corp., AP3310GH Datasheet

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... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 4. 4. Parameter AP3310GH/J RoHS-compliant Product BV -20V DSS R 150mΩ DS(ON) I -10A TO-252( TO-251(J) ...

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... AP3310GH/J Electrical Characteristics@T Symbol BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... GS Fig 3. On-Resistance v.s. Gate Voltage 20 -4.5V -4.0V 15 -3.5V 10 -3.0V 5 -2. -2. 7.5 10.0 Fig 2. Typical Output Characteristics 1.8 = -2. = 1.5 1.2 0.9 0 Fig 4. Normalized On-Resistance AP3310GH =150 Drain-to-Source Voltage ( -2. -4. Junction Temperature ( j v.s. Junction Temperature -4.5V -4.0V -3.5V -3.0V -2. -2. 100 150 ...

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... AP3310GH 100 T , Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 10 T =25 °C C Single Pulse (V) DS Fig 7. Maximum Safe Operating Area 125 150 o C) Fig 6. Typical Power Dissipation 1 1ms 0.1 10ms 100ms DC 0 ...

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... SD Fig 11. Forward Characteristic of Reverse Diode 1000 100 Fig 10. Typical Capacitance Characteristics 1 0.5 0 1.3 1.5 Fig 12. Gate Threshold Voltage v.s. AP3310GH ( Junction Temperature ( j Junction Temperature f=1.0MHz Ciss Coss Crss 11 13 100 150 ...

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... AP3310GH Fig 13. Switching Time Circuit -1~-3mA I G Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.3 x RATED THE OSCILLOSCOPE -5V 0.3 x RATED d(on) r Fig 14. Switching Time Waveform ...