AP3310GJ Advanced Power Electronics Corp., AP3310GJ Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness

AP3310GJ

Manufacturer Part Number
AP3310GJ
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP3310GH.pdf (6 pages)

Specifications of AP3310GJ

Vds
-20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@4.5v
150
Rds(on) / Max(m?) Vgs@2.5v
250
Qg (nc)
6
Qgs (nc)
1.5
Qgd (nc)
0.6
Id(a)
-10
Pd(w)
25
Configuration
Single P
Package
TO-251
▼ Simple Drive Requirement
▼ 2.5V Gate Drive Capability
▼ Fast Switching Characteristic
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and cost-
effectiveness.
This device is suited for low voltage and battery power applications.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 4.5V
@ 4.5V
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
3
-55 to 150
-55 to 150
G
Rating
BV
R
I
D
0.01
D
- 20
+12
-6.2
-10
-24
25
DS(ON)
S
DSS
G
Value
62.5
110
5.0
D
AP3310GH/J
S
TO-252(H)
TO-251(J)
150mΩ
200902096
-20V
Units
W/℃
Units
℃/W
℃/W
℃/W
-10A
W
℃
℃
V
V
A
A
A
1

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AP3310GJ Summary of contents

Page 1

Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ 2.5V Gate Drive Capability ▼ Fast Switching Characteristic Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost- effectiveness. This device ...

Page 2

AP3310GH/J Electrical Characteristics@T Symbol BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T ...

Page 3

T = 0.0 2.5 5 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 800 I T 600 400 200 (V) GS Fig 3. ...

Page 4

AP3310GH 100 T , Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 10 T =25 °C C Single Pulse (V) DS Fig ...

Page 5

I =-2. =- Total Gate Charge (nC) G Fig 9. Gate Charge Characteristics =150 0.3 0.5 ...

Page 6

AP3310GH Fig 13. Switching Time Circuit -1~-3mA I G Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.3 x RATED V ...

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