AP3403GJ Advanced Power Electronics Corp., AP3403GJ Datasheet

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device

AP3403GJ

Manufacturer Part Number
AP3403GJ
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP3403GH.pdf (4 pages)

Specifications of AP3403GJ

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
200
Rds(on) / Max(m?) Vgs@4.5v
400
Qg (nc)
3.8
Qgs (nc)
1.7
Qgd (nc)
1.6
Id(a)
-10
Pd(w)
36.7
Configuration
Single P
Package
TO-251
▼ ▼ ▼ ▼ Low Gate Charge
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Fast Switching
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-case
Rthj-amb
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-252/TO-251 package is universally used for all commercial-
industrial application.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
± 20
36.7
0.29
- 30
-8.6
-10
-48
DS(ON)
DSS
Value
110
3.4
G
AP3403GH/J
G D
D
S
S
TO-252(H)
TO-251(J)
200mΩ
- 10A
-30V
Units
W/℃
℃/W
℃/W
200505031
Unit
W
℃
℃
V
V
A
A
A

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AP3403GJ Summary of contents

Page 1

Advanced Power Electronics Corp. ▼ ▼ ▼ ▼ Low Gate Charge ▼ ▼ ▼ ▼ Simple Drive Requirement ▼ ▼ ▼ ▼ Fast Switching Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient ...

Page 2

AP3403GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage ...

Page 3

T = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 250 200 150 100 ...

Page 4

AP3403GH =-10A D V =-24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse ...

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