AP3801GM Advanced Power Electronics Corp., AP3801GM Datasheet
AP3801GM
Specifications of AP3801GM
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AP3801GM Summary of contents
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... Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP3801GM Pb Free Plating Product BV -30V DSS R 70mΩ DS(ON Rating Units -30 ± -20 2.5 0.02 W/℃ ...
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... AP3801GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 =25 C 1.4 1.0 0.6 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.8 0.4 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP3801GM -10V o C -7.0V -5.0V -4.5V V =-3. Drain-to-Source Voltage ( -10V 100 o , Junction Temperature ( 100 o ...
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... AP3801GM - -25V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area Gate-to-Source Voltage (V) GS Fig 11 ...