AP3R303GMT-HF Advanced Power Electronics Corp., AP3R303GMT-HF Datasheet
AP3R303GMT-HF
Specifications of AP3R303GMT-HF
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AP3R303GMT-HF Summary of contents
Page 1
... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP3R303GMT-HF Halogen-Free Product BV 30V DSS R 3.3mΩ DS(ON) I 105A □ ...
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... AP3R303GMT-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 2.0 I =30A D V =10V G 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 1.2 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP3R303GMT- =150 C 10V C 7.0V 6.0V 5.0V V =4.0V G 2.0 4.0 6 Drain-to-Source Voltage ( 100 Junction Temperature ( 100 o ...
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... AP3R303GMT- =30A =15V DS V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...