AP40N03GH-HF Advanced Power Electronics Corp., AP40N03GH-HF Datasheet - Page 4

• Manufacturer Part Number: AP40N03GH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP40N03GH-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 21
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Qg (nc): 17
• Qgs (nc): 3
• Qgd (nc): 10
• Id(a): 36
• Pd(w): 50
• Configuration: Single N
• Package: TO-252

AP40N03GH/J-HF
1000
100
10
16
12
1
0
8
4
0
0.1
0
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
90%
Operation in this area
Single Pulse
10%
T
limited by R
V
V
C
GS
=25
DS
I
D
4
DS(ON)
=18A
o
V
C
Q
V
DS
t
G
DS
d(on)
V
,Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
=16V
DS
V
1
8
=20V
DS
t
r
=24V
12
10
16
t
d(off)
t
20
f
100ms
100us
10ms
1ms
DC
100
24
Fig 10. Effective Transient Thermal Impedance
1600
1200
0.01
800
400
0.1
0.00001
0
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
5V
0.01
0.02
V
Duty factor = 0.5
0.05
Single Pulse
0.1
0.2
G
5
0.0001
Q
V
GS
DS
9
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty Factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
+ T
Q
C
C
C
C
iss
oss
rss
29
1
4