AP40T03GH Advanced Power Electronics Corp., AP40T03GH Datasheet - Page 3

• Manufacturer Part Number: AP40T03GH
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP40T03GH

• Vds: 30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 45
• Qg (nc): 8.8
• Qgs (nc): 2.5
• Qgd (nc): 5.8
• Id(a): 28
• Pd(w): 31.25
• Configuration: Single N
• Package: TO-252

100
0.1
90
60
30
70
50
30
10
10
0
1
0.0
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
T
V
j
V
=150
Reverse Diode
o
DS
GS
V
C
1.0
0.4
, Drain-to-Source Voltage (V)
SD
, Gate-to-Source Voltage (V)
o
C
, Source-to-Drain Voltage (V)
5
2.0
0.8
10
T
j
T
I
=25
3.0
1.2
D
C
=25
=14A
V
o
C
G
℃
= 4. 0V
8 .0V
6 .0V
10V
4.0
1.6
15
2.0
1.4
0.8
0.2
2.5
2.0
1.5
1.0
0.5
75
50
25
0
0.0
Fig 4. Normalized On-Resistance
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
I
V
T
D
G
C
=18A
=10V
=150
v.s. Junction Temperature
V
Junction Temperature
T
DS
o
1.0
T
j
C
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
2.0
50
50
AP40T03GH/J
3.0
100
100
o
o
C )
V
C)
G
8 .0V
6 .0V
=4.0V
10V
150
4.0
150
3