AP40T03GJ Advanced Power Electronics Corp., AP40T03GJ Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP40T03GJ

Manufacturer Part Number
AP40T03GJ
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP40T03GJ.pdf (6 pages)

Specifications of AP40T03GJ

Vds
30V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
25
Rds(on) / Max(m?) Vgs@4.5v
45
Qg (nc)
8.8
Qgs (nc)
2.5
Qgd (nc)
5.8
Id(a)
28
Pd(w)
31.25
Configuration
Single N
Package
TO-251

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
AP40T03GJ-HF
Manufacturer:
METRODYNE
Quantity:
20 000
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP40T03GJ)
are available for low-profile applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
31.25
D
0.25
+25
30
28
24
95
DS(ON)
G
DSS
D
Value
AP40T03GH/J
62.5
110
S
4
G D
S
TO-252(H)
TO-251(J)
25mΩ
200811034
Units
W/℃
Units
℃/W
℃/W
℃/W
30V
28A
W
℃
℃
V
V
A
A
A
1

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AP40T03GJ Summary of contents

Page 1

... The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03GJ) are available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP40T03GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...

Page 3

T = 0.0 1.0 2.0 3 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) ...

Page 4

AP40T03GH =18A =10V DS V =15V DS V =20V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 (0.1mm A3 Part Marking Information & Packing : TO-252 Laser Marking 40T03GH YWWSSS 0.127~0.381 C Part Number Package Code LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM MAX A2 1.80 2.30 A3 0.40 0.50 B1 0.40 0.70 D 6.00 6.50 D1 4.80 5. ...

Page 6

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 Part Marking Information & Packing : TO-251 40T03GJ LOGO YWWSSS Part Number Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence Millimeters SYMBOLS MIN NOM MAX A 2.20 2.30 2.40 A1 ...

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