AP4232GM Advanced Power Electronics Corp., AP4232GM Datasheet
AP4232GM
Specifications of AP4232GM
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AP4232GM Summary of contents
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... J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP4232GM RoHS-compliant Product BV 30V DSS R 22mΩ DS(ON Rating Units 30 +20 7.8 6 0.016 W/℃ ...
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... AP4232GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 =10V G 1.3 1.0 0.7 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 1.5 1.0 o =25 C 0.5 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4232GM 150 C A 10V 7.0 V 5 Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) ...
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... AP4232GM =15V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...
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... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4232GM YWWSSS SYMBOLS α A 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Package Code ...