AP4224AGM Advanced Power Electronics Corp., AP4224AGM Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4224AGM

Manufacturer Part Number
AP4224AGM
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4224AGM

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
15
Rds(on) / Max(m?) Vgs@4.5v
23
Qg (nc)
8.5
Qgs (nc)
1.8
Qgd (nc)
5
Id(a)
9.2
Pd(w)
2
Configuration
Dual N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4224AGM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low On-Resistance
▼ Simple Drive Requirement
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
D1
3
3
D1
SO-8
D2
D2
S1
G1
S2
G2
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
3
RoHS-compliant Product
G1
-55 to 150
-55 to 150
Rating
BV
R
I
D
+20
9.2
7.3
30
30
DS(ON)
2
DSS
Value
S1
D1
62.5
AP4224AGM
G2
15mΩ
200902241
9.2A
Units
℃/W
30V
Unit
W
V
V
A
A
A
D2
S2
1

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AP4224AGM Summary of contents

Page 1

... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP4224AGM RoHS-compliant Product BV 30V DSS R 15mΩ DS(ON Rating Units 30 +20 9.2 7.3 30 ...

Page 2

... AP4224AGM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10V G 1.6 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.4 1.2 1 0.8 0.6 0.4 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4224AGM 10V 150 C A 7.0V 6. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o ...

Page 4

... AP4224AGM =15V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

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