AP4412GM Advanced Power Electronics Corp., AP4412GM Datasheet
AP4412GM
Specifications of AP4412GM
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AP4412GM Summary of contents
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... Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP4412GM Pb Free Plating Product BV 25V DSS R 33mΩ DS(ON Rating Units 25 ±20 7 5.8 30 2.5 0.02 W/℃ ...
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... AP4412GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... V =4. Fig 2. Typical Output Characteristics 1.8 I =7A D =25 ℃ 1.6 1.4 1.2 1 0.8 0 -50 AP4412GM o T =150 Drain-to-Source Voltage ( = =10V Junction Temperature ( j Fig 4. Normalized On-Resistance v.s. Junction Temperature 10V 8.0V 6.0V 5.0V V =4. 100 ...
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... AP4412GM Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 Single Pulse 0.01 0 (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 o C) 1ms 10ms 100ms 1s 10s DC 0.001 10 100 Fig 8. Effective Transient Thermal Impedance ...
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... Tj=150 C 1 0.1 0.1 0.3 0.5 0.7 0.9 V (V) SD Fig 11. Forward Characteristic of Reverse Diode 1000 100 Fig 10. Typical Capacitance Characteristics Tj= 1.1 1.3 1.5 -50 AP4412GM ( Junction Temperature ( j Fig 12. Gate Threshold Voltage v.s. Junction Temperature f=1.0MHz Ciss Coss Crss 25 29 100 150 C ) 5/6 ...
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... AP4412GM Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.64 x RATED THE OSCILLOSCOPE 5V 0.64 x RATED d(off) d(on) r Fig 14. Switching Time Waveform ...