AP42T03GP Advanced Power Electronics Corp., AP42T03GP Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP42T03GP

Manufacturer Part Number
AP42T03GP
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP42T03GP

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
22
Rds(on) / Max(m?) Vgs@4.5v
35
Qg (nc)
8
Qgs (nc)
2.5
Qgd (nc)
4.5
Id(a)
30
Pd(w)
37.8
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The Advanced Power MOSFETs from APEC provide the
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
c
c
Symbol
Symbol
=25℃
=100℃
c
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
27.8
S
+20
120
30
30
18
DS(ON)
DSS
Value
4.5
62
AP42T03GP
TO-220(P)
22mΩ
200811271
Units
Units
℃/W
℃/W
30V
30A
W
V
V
A
A
A
1

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AP42T03GP Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP42T03GP RoHS-compliant Product BV 30V DSS R 22mΩ DS(ON) I 30A D G TO-220( Rating Units ...

Page 2

... AP42T03GP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... 4.0 5.0 0.0 Fig 2. Typical Output Characteristics 2.0 I =18A D V =10V G 1.4 0.8 0.2 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.2 C 0.8 0.4 0.0 -50 1.6 Fig 6. Gate Threshold Voltage v.s. AP42T03GP 10V o C 7.0V 6.0V 5.0V V =4.0V G 2.0 4.0 6.0 8 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...

Page 4

... AP42T03GP 12 I =18A =15V DS V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E φ Part Marking Information & Packing : TO-220 42T03GP LOGO YWWSSS Part Number Package Code Date Code (ywwsss) Y:Last Digit Of The Year WW:Week SSS:Sequence Millimeters SYMBOLS MIN ...

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