AP4435GH-HF Advanced Power Electronics Corp., AP4435GH-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4435GH-HF

Manufacturer Part Number
AP4435GH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4435GH-HF

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
20
Rds(on) / Max(m?) Vgs@4.5v
36
Qg (nc)
16.5
Qgs (nc)
2.7
Qgd (nc)
11
Id(a)
-40
Pd(w)
44.6
Configuration
Single P
Package
TO-252
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP4435GJ) is available
for low-profile applications.
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
-150
44.6
0.36
G
+20
AP4435GH/J-HF
-30
-40
-25
DS(ON)
G
D
DSS
D
S
Value
62.5
2.8
110
S
TO-252(H)
TO-251(J)
20mΩ
200907154
-30V
-40A
Units
W/℃
Units
℃/W
℃/W
℃/W
W
V
V
A
A
A
1

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AP4435GH-HF Summary of contents

Page 1

... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP4435GH/J-HF Halogen-Free Product BV -30V DSS R 20mΩ DS(ON) I -40A TO-251( ...

Page 2

... AP4435GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1 =-10V G 1.4 1.0 0 -50 Fig 4. Normalized On-Resistance 2.0 1.5 1 0.5 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP4435GH/J- -10V -7.0V -6.0V -5. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 2.01E+ 100 o ...

Page 4

... AP4435GH/ Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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