AP4501CGM-HF Advanced Power Electronics Corp., AP4501CGM-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness

AP4501CGM-HF

Manufacturer Part Number
AP4501CGM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4501CGM-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
25
Rds(on) / Max(m?) Vgs@4.5v
45
Qg (nc)
4.6
Qgs (nc)
1.2
Qgd (nc)
3
Id(a)
7
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
D1
3
3
D1
SO-8
D2
D2
S1
G1
S2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
G2
N-channel
3
N-CH BV
P-CH BV
+20
30
7.0
5.6
20
G1
Halogen-Free Product
-55 to 150
-55 to 150
Rating
2
R
I
R
I
D
D
D1
P-channel
AP4501CGM-HF
DS(ON)
DS(ON)
DSS
DSS
Value
S1
62.5
+20
-4.0
-3.2
-30
-20
G2
25mΩ
80mΩ
200910011
-30V
Units
℃/W
-4A
30V
Unit
7A
W
D2
V
V
A
A
A
S2
1

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AP4501CGM-HF Summary of contents

Page 1

... Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N- P- SO-8 N-channel 30 +20 3 7 Parameter 3 AP4501CGM-HF Halogen-Free Product 30V DSS R 25mΩ DS(ON -30V DSS R 80mΩ DS(ON Rating Units ...

Page 2

... AP4501CGM-HF N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS 2 Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D V =-25V DS V =-4. =-15V =3.3Ω,V =-10V =15Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.7A =-4A dI/dt=100A/µs AP4501CGM-HF Min. Typ. Max. Units - 120 - = -10 = +100 - 9 ...

Page 4

... AP4501CGM-HF N-Channel 40 ℃ Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... DC Single Pulse 0.01 10 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance d(off) f Fig 12. Gate Charge Waveform AP4501CGM-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...

Page 6

... AP4501CGM-HF P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 120 =25 A 110 100 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 ...

Page 7

... DC Single Pulse 0.01 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance V G -4. d(off) f Fig 12. Gate Charge Waveform AP4501CGM-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...

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