AP4800AGM-HF Advanced Power Electronics Corp., AP4800AGM-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4800AGM-HF

Manufacturer Part Number
AP4800AGM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4800AGM-HF

Vds
30V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
18
Rds(on) / Max(m?) Vgs@4.5v
28
Qg (nc)
11.4
Qgs (nc)
2
Qgd (nc)
6.4
Id(a)
9.6
Pd(w)
2.5
Configuration
Single N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4800AGM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
D
3
3
D
SO-8
D
D
S
S
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
3
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
0.02
+25
AP4800AGM-HF
9.6
7.7
2.5
30
40
DS(ON)
DSS
G
Value
50
D
18mΩ
S
200902049
9.6A
Units
W/℃
℃/W
30V
Unit
W
V
V
A
A
A
1

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AP4800AGM-HF Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP4800AGM-HF Halogen-Free Product BV 30V DSS R 18mΩ DS(ON Rating Units 30 V +25 V 9.6 A 7.7 A ...

Page 2

... AP4800AGM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10V G 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1.2 o =25 C 1.0 0.8 0.6 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4800AGM-HF 10V 150 C A 7.0 V 5 Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...

Page 4

... AP4800AGM- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform ...

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