AP4800BGM-HF Advanced Power Electronics Corp., AP4800BGM-HF Datasheet - Page 4

• Manufacturer Part Number: AP4800BGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4800BGM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 18
• Rds(on) / Max(m?) Vgs@4.5v: 35
• Qg (nc): 7.5
• Qgs (nc): 1.5
• Qgd (nc): 4.5
• Id(a): 9.6
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

AP4800BGM-HF
0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
Operation in this area
I
V
limited by R
Single Pulse
D
V
90%
10%
DS
V
T
= 9 A
DS
GS
A
=15V
=25
DS(ON)
V
4
Q
o
DS
0.1
C
t
G
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
t
8
r
1
12
t
d(off)
10
16
t
f
100ms
100us
10ms
1ms
DC
1s
100
20
Fig 10. Effective Transient Thermal Impedance
1000
0.01
800
600
400
200
0.1
1
0.0001
0
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
Duty factor=0.5
0.05
0.02
0.1
0.2
0.01
V
Single Pulse
0.001
G
5
Q
V
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
21
10
thia
=125 ℃/W
j
= P
t
f=1.0MHz
DM
T
x R
100
25
thja
C
C
C
Q
+ T
oss
rss
iss
a
1000
29
4