AP4810GSM Advanced Power Electronics Corp., AP4810GSM Datasheet

Page 1

... Maximum Thermal Resistance, Junction-ambient Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL MOSFET WITH SCHOTTKY DIODE SO-8 S Parameter Parameter 3 (MOSFET) 3 (Schottky) AP4810GSM RoHS-compliant Product BV DSS R 13.5mΩ DS(ON Schottky Diode G S Rating Units 30 + ...

Page 2

... AP4810GSM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10V G 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 1. = 1.25 1.00 0.75 0.50 0.6 0.8 -50 Fig 6. Gate Threshold Voltage v.s. AP4810GSM 150 C 10V A 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP4810GSM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 50 V =5V DS ...