AP4813GSM-HF Advanced Power Electronics Corp., AP4813GSM-HF Datasheet
AP4813GSM-HF
Specifications of AP4813GSM-HF
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AP4813GSM-HF Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-ambient Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL MOSFET WITH SCHOTTKY DIODE SO-8 S Parameter Parameter 3 (MOSFET) 3 (Schottky) AP4813GSM-HF Halogen-Free Product BV DSS R 9mΩ DS(ON Schottky Diode G S Rating Units 30 + ...
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... AP4813GSM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 1 =10V G 1.6 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.50 1. 1.00 0.75 0.50 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4813GSM-HF o 10V T = 150 C A 7.0V 6. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o ...
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... AP4813GSM- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...