AP4820GYT-HF Advanced Power Electronics Corp., AP4820GYT-HF Datasheet - Page 3

• Manufacturer Part Number: AP4820GYT-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4820GYT-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9.5
• Rds(on) / Max(m?) Vgs@4.5v: 21
• Qg (nc): 12
• Qgs (nc): 3
• Qgd (nc): 7
• Id(a): 15
• Pd(w): 3.57
• Configuration: Single N
• Package: PMPAK 3x3

80
60
40
20
14
12
10
20
16
12
0
8
6
8
4
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
V
0.2
SD
Reverse Diode
V
DS
V
, Source-to-Drain Voltage (V)
2
4
GS
, Drain-to-Source Voltage (V)
T
0.4
, Gate-to-Source Voltage (V)
j
=150
o
C
0.6
4
6
T
I
T
D
A
A
= 8 A
=25
=25
0.8
o
℃
C
T
6
8
j
=25
V
1
G
o
= 4.0V
C
7.0V
6.0V
5.0V
10V
1.2
8
10
60
50
40
30
20
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2.4
2.0
1.6
1.2
0.8
0.4
0
0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
D
G
=12A
=10V
v.s. Junction Temperature
Junction Temperature
T
V
T
j
2
DS
0
0
, Junction Temperature (
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
T
A
= 150
AP4820GYT-HF
4
50
50
o
C
o
100
6
100
C)
o
V
C)
G
= 4.0V
7.0V
6.0V
5.0V
10V
150
150
8
3