AP9620AGM-HF Advanced Power Electronics Corp., AP9620AGM-HF Datasheet
AP9620AGM-HF
Specifications of AP9620AGM-HF
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AP9620AGM-HF Summary of contents
Page 1
... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP9620AGM-HF Halogen-Free Product BV -20V DSS R 21mΩ DS(ON Rating Units - ...
Page 2
... AP9620AGM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
... 4.5 V 1.8 G 1.6 1.4 1.2 1.0 0.8 0.6 0.4 5 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 I =-250uA D 1.4 1 0.6 0.4 0.2 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9620AGM- -5.0V -4.5V -3.5V -2. 2. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...
Page 4
... AP9620AGM- - -10V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...