AP4955GM Advanced Power Electronics Corp., AP4955GM Datasheet
AP4955GM
Specifications of AP4955GM
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AP4955GM Summary of contents
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... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP4955GM RoHS-compliant Product BV -20V DSS R 45mΩ DS(ON) I -5. Rating Units -20 +12 -5.6 -4.5 ...
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... AP4955GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ∆BV /∆T Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1.6 I =-5A D 1.4 V =-4.5V G 1.2 1.0 0.8 0.6 5 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1.2 1.0 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4955GM -5. -4.5V -3.0V -2. 2 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...
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... AP4955GM =-16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...