AP4957AGM Advanced Power Electronics Corp., AP4957AGM Datasheet
AP4957AGM
Specifications of AP4957AGM
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AP4957AGM Summary of contents
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... J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP4957AGM RoHS-compliant Product BV -30V DSS R 26mΩ DS(ON) I -7. Rating Units -30 ±20 -7.4 -5.9 - ℃ ...
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... AP4957AGM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 1 =-10V G 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1.2 o =25 C 1.0 j 0.8 0.6 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4957AGM 150 C -10V A -7.0V -5.0V -4.5V V =-3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...
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... AP4957AGM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 30 V =- ...
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... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4957AGM YWWSSS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. DETAIL A Part Number Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW： ...