AP4959GM Advanced Power Electronics Corp., AP4959GM Datasheet
AP4959GM
Specifications of AP4959GM
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AP4959GM Summary of contents
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... J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO Parameter Parameter 3 AP4959GM RoHS-compliant Product BV -16V DSS R 65mΩ DS(ON) I -4. Rating Units -16 ±8 -4.7 -3.8 -20 2 0.016 W/℃ ...
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... AP4959GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 =-4. 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 2.0 1 1.0 0.5 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP4959GM -5. 150 C A -4.5V -3.5V -1. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...
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... AP4959GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...
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... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4959GM YWWSSS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. DETAIL A Part Number Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW： ...