AP4963GEM-HF Advanced Power Electronics Corp., AP4963GEM-HF Datasheet
AP4963GEM-HF
Specifications of AP4963GEM-HF
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AP4963GEM-HF Summary of contents
Page 1
... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP4963GEM-HF Halogen-Free Product BV -30V DSS R 36mΩ DS(ON Rating Units - 30 + ...
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... AP4963GEM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 1 =-10V G 1.6 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.4 1 0.8 0.6 0.4 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4963GEM-HF -10V o T =150 C A -7.0V -6.0V -5. -4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...
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... AP4963GEM- - -15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area 10 limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...