AP50T03GJ Advanced Power Electronics Corp., AP50T03GJ Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP50T03GJ

Manufacturer Part Number
AP50T03GJ
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP50T03GJ.pdf (4 pages)

Specifications of AP50T03GJ

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
16
Rds(on) / Max(m?) Vgs@4.5v
30
Qg (nc)
10
Qgs (nc)
3.5
Qgd (nc)
6
Id(a)
37
Pd(w)
34.7
Configuration
Single N
Package
TO-251
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
Data & specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Description
Absolute Maximum Ratings
Thermal Data
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP50T03GJ) are available for low-profile applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
34.7
0.28
±20
110
30
37
24
DS(ON)
G
DSS
D
Value
AP50T03GH/J
S
3.6
110
G D
S
TO-251(J)
TO-252(H)
16mΩ
Units
W/℃
Units
℃/W
℃/W
30V
37A
200315051
W
℃
℃
V
V
A
A
A

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AP50T03GJ Summary of contents

Page 1

... The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP50T03GJ) are available for low-profile applications. Absolute Maximum Ratings Symbol V Drain-Source Voltage ...

Page 2

AP50T03GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage ...

Page 3

T = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = ...

Page 4

AP50T03GH =15V DS V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 =25 ...

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