AP60N03GJ Advanced Power Electronics Corp., AP60N03GJ Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP60N03GJ

Manufacturer Part Number
AP60N03GJ
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP60N03GH.pdf (4 pages)

Specifications of AP60N03GJ

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
13.5
Rds(on) / Max(m?) Vgs@4.5v
20
Qg (nc)
22.4
Qgs (nc)
2.7
Qgd (nc)
14
Id(a)
55
Pd(w)
62.5
Configuration
Single N
Package
TO-251
▼ Low On-Resistance
▼ Fast Switching
▼ Simple Drive Requirement
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60N03GJ) is available for low-profile applications.
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
62.5
±20
215
0.5
30
55
35
DS(ON)
G
D
DSS
AP60N03GH/J
Value
S
110
2.0
G
D S
TO-252(H)
TO-251(J)
13.5mΩ
200602051-1/4
Units
W/℃
Units
℃/W
℃/W
30V
55A
W
℃
℃
V
V
A
A
A

Related parts for AP60N03GJ

Image
Part Number
Description
Manufacturer
Datasheet
Request R
AP4800TH
Part Number:
AP4800TH
Description:
Manufacturer:
Advanced Power Electronics Corp.
4503AGM
Part Number:
4503AGM
Description:
Manufacturer:
Advanced Power Electronics Corp.
4835GM
Part Number:
4835GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
4957AGM
Part Number:
4957AGM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9468GM
Part Number:
9468GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9474GM
Part Number:
9474GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9467GM
Part Number:
9467GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9962AGM
Part Number:
9962AGM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9985GM
Part Number:
9985GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9412GM
Part Number:
9412GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
AP9412GM
Part Number:
AP9412GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9412BGM
Part Number:
9412BGM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9685GM
Part Number:
9685GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
AP6679GM
Part Number:
AP6679GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
6679GM
Part Number:
6679GM
Description:
Manufacturer:
Advanced Power Electronics Corp.

AP60N03GJ Summary of contents

Page 1

... The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60N03GJ) is available for low-profile applications. Absolute Maximum Ratings Symbol V Drain-Source Voltage ...

Page 2

AP60N03GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage ...

Page 3

T = 150 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) ...

Page 4

AP60N03GH =28A =16V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 ...

Related keywords